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  1. (, International Society of the Learning Sciences, Inc.)
    Rajala, A; Cortez, A; Hofmann, R; Jornet, A; Lotz_Sisitka, H; Markauskaite, L (Ed.)
    Free, publicly-accessible full text available June 1, 2026
  2. (, Proceedings)
    Seitamaa-Hakkarainen, P; Kaiju, K (Ed.)
    Free, publicly-accessible full text available June 1, 2026
  3. ; ; ; ; ; ; ; (, Applied Physics Letters)
    N incorporation mechanisms in GaAs1−xNx alloys are probed using combined experimental and computational Rutherford backscattering spectrometry and nuclear reaction analysis angular yield scans. For xN < 0.025, in addition to substitutional nitrogen, NAs, (N-N)As, and (N-As)As split-interstitials are observed. However, for xN ≥ 0.025, evidence for N tetrahedral interstitials, Ntetra, emerges. We propose a mechanism for stabilization of Ntetra in which the elastic interaction between Ntetra and NAs is induced by the opposite signs of their misfit volumes. This work opens opportunities for exploring the formation of Ntetra and its influence on the properties of a variety of highly mismatched alloys. 
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  4. ; ; ; ; ; ; ; (, Applied Physics Letters)
    We have investigated the influence of non-stoichiometry and local atomic environments on carrier transport in GaAs(N)Bi alloy films using local-electrode atom probe tomography (LEAP) in conjunction with time-resolved terahertz photoconductivity measurements. The local concentrations of N, Bi, and excess As, as well as Bi pair correlations, are quantified using LEAP. Using time-resolved THz photoconductivity measurements, we show that carrier transport is primarily limited by excess As, with the highest carrier mobilities for layers with yBi > 0.035. 
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  5. ; ; ; ; ; ; ; (, Applied Physics Letters)
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  7. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Letters)
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